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  • image of Single FETs, MOSFETs>SIHB6N80AE-GE3
  • image of Single FETs, MOSFETs>SIHB6N80AE-GE3
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
SIHB6N80AE-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER MOSFET D2PAK (TO-
-
Tube
1040
Price:
$1.7600
inventory: 1040
Total number

Quantity

Price

Total price

1

$2.1890

$2.1890

50

$1.7600

$88.0000

100

$1.4520

$145.2000

500

$1.2210

$610.5000

1000

$1.0450

$1,045.0000

2000

$0.9900

$1,980.0000

5000

$0.9460

$4,730.0000

10000

$0.9240

$9,240.0000

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product details
image of Single FETs, MOSFETs>SIHB6N80AE-GE3
SIHB6N80AE-GE3
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
SIHB6N80AE-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER
Single FETs, MOSFETs
Tube
1040 
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesE
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs950mOhm @ 2A, 10V
Power Dissipation (Max)62.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds422 pF @ 100 V
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