IPD35N10S3L26ATMA2 Single FETs, MOSFETs_Genchips Trading_Electronic Component Solutions_Ceramic Capacitors_Electrolytic Capacitors_Tantalum Capacitors_Bipolar Transistors_Connectors_Crystal Oscillators_Integrated Circuit_Circuit Protection

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

IPD35N10S3L26ATMA2

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(75V 120V(

Tape & Reel (TR)

Price:

$0.7480

Total number

Quantity

Price

Total price

2500

$0.7480

$1,870.0000

5000

$0.7150

$3,575.0000

12500

$0.6820

$8,525.0000

Obtain quotation information

product details

IPD35N10S3L26ATMA2

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

IPD35N10S3L26ATMA2

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(75V 120

Single FETs, MOSFETs

Tape & Reel (TR)

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 35A, 10V
Power Dissipation (Max)	71W (Tc)
Vgs(th) (Max) @ Id	2.4V @ 39µA
Supplier Device Package	PG-TO252-3-11
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Qualification	AEC-Q101