PSMN1R9-40YSBX Single FETs, MOSFETs_YUANCHIP TECH_Electronic Component Solutions_Ceramic Capacitors_Electrolytic Capacitors_Tantalum Capacitors_Bipolar Transistors_Connectors_Crystal Oscillators_Integrated Circuit_Circuit Protection

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PSMN1R9-40YSBX

Single FETs, MOSFETs

Nexperia

PSMN1R9-40YSB/SOT669/LFPAK

Tape & Reel (TR)

Price:

$0.6930

Total number

Quantity

Price

Total price

$1.5840

$1.2980

$12.9800

100

$1.0010

$100.1000

500

$0.8470

$423.5000

1500

$0.6930

$1,039.5000

3000

$0.6490

$1,947.0000

7500

$0.6270

$4,702.5000

10500

$0.5940

$6,237.0000

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product details

PSMN1R9-40YSBX

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

PSMN1R9-40YSBX

Single FETs, MOSFETs

Nexperia

PSMN1R9-40YSB/S

Single FETs, MOSFETs

Tape & Reel (TR)

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Nexperia
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SC-100, SOT-669
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 25A, 10V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	194W (Tc)
Vgs(th) (Max) @ Id	3.6V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6297 pF @ 20 V

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