IPTC026N12NM6ATMA1 Single FETs, MOSFETs_YUANCHIP TECH_Electronic Component Solutions_Ceramic Capacitors_Electrolytic Capacitors_Tantalum Capacitors_Bipolar Transistors_Connectors_Crystal Oscillators_Integrated Circuit_Circuit Protection

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IPTC026N12NM6ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tape & Reel (TR)

Price:

$3.7730

Total number

Quantity

Price

Total price

$6.6550

$6.0060

$60.0600

$5.7310

$143.2750

100

$4.9720

$497.2000

250

$4.7520

$1,188.0000

500

$4.3340

$2,167.0000

1800

$3.7730

$6,791.4000

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product details

IPTC026N12NM6ATMA1

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

IPTC026N12NM6ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Single FETs, MOSFETs

Tape & Reel (TR)

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	OptiMOS™ 6
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerSOP Module
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs	2.6mOhm @ 115A, 10V
Power Dissipation (Max)	3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id	3.6V @ 169µA
Supplier Device Package	PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	120 V
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 60 V

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