IMBG65R015M2HXTMA1 Single FETs, MOSFETs_YUANCHIP TECH_Electronic Component Solutions_Ceramic Capacitors_Electrolytic Capacitors_Tantalum Capacitors_Bipolar Transistors_Connectors_Crystal Oscillators_Integrated Circuit_Circuit Protection

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IMBG65R015M2HXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SILICON CARBIDE MOSFET

Tape & Reel (TR)

Price:

$15.8180

Total number

Quantity

Price

Total price

$23.4850

$21.6590

$216.5900

$20.6910

$517.2750

100

$18.5020

$1,850.2000

250

$17.6440

$4,411.0000

500

$16.7970

$8,398.5000

1000

$15.8180

$15,818.0000

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product details

IMBG65R015M2HXTMA1

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

IMBG65R015M2HXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SILICON CARBIDE

Single FETs, MOSFETs

Tape & Reel (TR)

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	CoolSiC™ Gen 2
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	115A (Tc)
Rds On (Max) @ Id, Vgs	18mOhm @ 64.2A, 18V
Power Dissipation (Max)	416W (Tc)
Vgs(th) (Max) @ Id	5.6V @ 13mA
Supplier Device Package	PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Vgs (Max)	+23V, -7V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2792 pF @ 400 V

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